SiO2 NAMUNA SIRTIGA GE QATLAMLARINI O‘TKAZISH JARAYONI VA QIZDIRISHDAN SUNG Ge QATLAMLARINING KIMYOVIY VA FIZIK XOSSALARINI O’RGANISH.
Referat
SiO2 ustidagi Ge qatlamlarini holatni namlash hodisasi odatda qatlam funksiyasi sifatida tekshiriladi. Qalinligi dGe (10 -86 nm gacha) va toblanish harorati 580–700 °C. Ge qatlamlarining shakllanish qalinligi mos ravishda 10-60 va 86 nm. Bu temperaturada kanal kengligi sezilarli darajada torayadi va o‘rtasida yupqalashgan Ge qatlamining shakllanish bosqichi boshlanadi.
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